semihow rev.a2,.may 2015 HDA40U20GW 3 2 1 v rrm = 200 v i f = 2 x 20a t rr = 20ns to - 247 HDA40U20GW ultra fast recovery diode features ? high breakdown voltage ? high speed switching general description with excellent performance in reverse recovery time, switching speed and rated current, HDA40U20GW can be utilized with high voltage power switches for voltage limitation and high - frequency current rectification. may 2015 absolute maximum ratings t c =25 c unless otherwise noted thermal resistance characteristics symbol parameter test conditions min typ max unit v br breakdown voltage i r = 50ua 200 -- -- v v f forward voltage i f = 20a, t c = 25 -- 0.95 1.05 v i r reverse current v r = 200v, t c = 25 -- -- 10 ua t rr reverse recovery time i f = 1a, di / dt = 200a/ s -- 20 -- ns i f = 20a, di / dt = 200a/ s -- 26 -- ns electrical characteristics (per diode) symbol parameter typ. max. unit r jc junction -to - case (per diode) -- 1.0 /w symbol parameter value unit v rrm peak repetitive reverse voltage 200 v v r dc blocking voltage i f(av) average rectifier forward current (per diode) (total diode) 20 40 a i fsm non - rectifier peak surge current @8.3ms (per diode) 200 a t j , t stg operating and storage temperature range - 55 to +150
semihow rev.a2,.may 2015 HDA40U20GW typical characteristics (per diode) figure 1. forward current derating curve figure 2. typical forward characterisitics figure 3. typical reverse characteristics figure 4. typical junction capacitance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10 t a =25 o c t a =75 o c t a =125 o c instantaneous forward current [a] forward voltage [v] 0 50 100 150 200 0.1 1 10 100 1000 t a =25 o c t a =75 o c instantaneous reverse current [na] reverse voltage [v] t a =125 o c 1 10 100 50 100 150 200 250 junction capacitance [pf] reverse voltage [v] 25 50 75 100 125 150 0 5 10 15 20 25 average forward rectified current [a] case temperature [ o c]
semihow rev.a2,.may 2015 HDA40U20GW package dimension to - 247
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